AO4438 60v n-channel mosfet product summary v ds (v) = 60v i d = 8.2a (v gs = 10v) r ds(on) < 22m w (v gs = 10v) r ds(on) < 27m w (v gs = 4.5v) 100% uis tested 100% rg tested general description the AO4438 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. soic-8 top view bottom view d d d d s s s g g ds symbol v ds v gs i dm t j , t stg symbol typ max 24 40 54 75 r q jl 21 30 c 3.1 2 -55 to 150 t a =70c i d continuous drain current a maximum units parameter t a =25c t a =70c 60 absolute maximum ratings t a =25c unless otherwise noted v maximum junction-to-ambient a steady-state 8.2 6.6 40 c/w c/w w junction and storage temperature range a v 20 pulsed drain current b power dissipation t a =25c gate-source voltage p d drain-source voltage maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja AO4438 60v n-channel mosfet product summary v ds (v) = 60v i d = 8.2a (v gs = 10v) r ds(on) < 22m w (v gs = 10v) r ds(on) < 27m w (v gs = 4.5v) 100% uis tested 100% rg tested general description the AO4438 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. soic-8 top view bottom view d d d d s s s g g ds alpha & omega semiconductor, ltd.
AO4438 symbol min typ max units bv dss 60 v 1 t j =55c 5 i gss 100 na v gs(th) 2 2.3 3 v i d(on) 40 a 16.3 22 t j =125c 30 40 20 27 m w g fs 24 s v sd 0.74 1 v i s 3 a c iss 1920 2300 pf c oss 155 pf c rss 116 pf r g 0.65 0.8 w q g (10v) 47.6 58 nc q g (4.5v) 24.2 30 nc q gs 6 nc q gd 14.4 nc t d(on) 8.2 ns v gs =0v, v ds =30v, f=1mhz v gs =0v, v ds =0v, f=1mhz switching parameters reverse transfer capacitance gate resistance output capacitance i s =1a,v gs =0v v gs =10v, i d =8.2a diode forward voltage gate source charge gate drain charge turn-on delaytime total gate charge v gs =10v, v ds =30v, i d =8.2a r ds(on) static drain-source on-resistance forward transconductance m w v gs =4.5v, i d =7.6a v ds =5v, i d =8.2a gate threshold voltage v ds =v gs i d =250 m a on state drain current v gs =10v, v ds =5v m a gate-body leakage current v ds =0v, v gs = 20v drain-source breakdown voltage i d =250 m a, v gs =0v i dss zero gate voltage drain current v ds =60v, v gs =0v n channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters maximum body-diode continuous current dynamic parameters total gate charge input capacitance alpha & omega semiconductor, ltd. t d(on) 8.2 ns t r 5.5 ns t d(off) 29.7 ns t f 5.2 ns t rr 34 41 ns q rr 53 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice v gs =10v, v ds =30v, r l =3.6 w , r gen =3 w turn-on delaytime turn-on rise time body diode reverse recovery charge i f =8.2a, di/dt=100a/ m s turn-off delaytime turn-off fall time body diode reverse recovery time i f =8.2a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. the current rating is base d on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev4: nov. 2010 alpha & omega semiconductor, ltd.
AO4438 typical electrical and thermal characteristics: n-c hannel 0 10 20 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 6v 4v 4.5v 10v 0 5 10 15 20 25 30 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics 14 16 18 20 22 0 5 10 15 20 r ds(on) (m w ww w ) 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 normalized on-resistance v gs =10v i d =8.2a v gs =4.5v i d =7.6a 25 c 125 c v ds =5v v gs =4.5v v gs =10v alpha & omega semiconductor, ltd. 0 10 20 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 6v 4v 4.5v 10v 0 5 10 15 20 25 30 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics 14 16 18 20 22 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =8.2a v gs =4.5v i d =7.6a 10 20 30 40 50 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =8.2a 25 c 125 c alpha & omega semiconductor, ltd.
AO4438 typical electrical and thermal characteristics: n-c hannel 0 2 4 6 8 10 0 10 20 30 40 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 i d (amps) 100 m s 10ms 1ms 0.1s 1s 10s dc t j(max) =150 c t a =25 c r ds(on) limited v ds =30v i d =8.2a t j(max) =150 c t a =25 c 10 m s alpha & omega semiconductor, ltd. 0 2 4 6 8 10 0 10 20 30 40 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc t j(max) =150 c t a =25 c r ds(on) limited v ds =30v i d =8.2a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =40 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c 10 m s alpha & omega semiconductor, ltd.
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